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Technische Information / technical information
IGBT-Module IGBT-Modules
FS50R06YL4
vorlaufige Daten preliminary data
Hochstzulassige Werte / maximum rated values
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral It value Isolations Prufspannung insulation test voltage tp= 1ms VR= 0V, tp= 10ms, Tvj= 125C RMS, f= 50Hz, t= 1min Tvj= 25C Tc= 55C Tc= 25C tp= 1ms, Tc= 55C Tc= 25C, Transistor VCES IC,nom. IC ICRM Ptot VGES IF IFRM It VISOL 600 50 55 100 V A A A
202
W
+20
V
50
A
100
A
630
As
2,5
kV
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sattigungsspannung collector emitter saturation voltage Gate Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor Emitter Reststrom collector emitter cut off current Gate Emitter Reststrom gate emitter leakage current VGE= 15V, Tvj= 25C, IC= IC,nom VGE= 15V, Tvj= 125C, IC= IC,nom VCE= VGE, Tvj= 25C, IC= 1mA VGE= -15V...+15V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VCE= 600V, VGE= 0V, Tvj= 25C VCE= 0V, VGE= 20V, Tvj= 25C VCEsat VGE(th) QG Cies Cres ICES IGES min. 4,5 typ. 1,95 2,20 5,5 max. 2,55 6,5 V V V
-
0,3
-
C
2,2
nF
0,2
nF
-
-
5
mA
-
-
400
nA
prepared by: P. Kanschat approved: R. Keggenhoff
date of publication: 2002-11-25 revision: 2.1
1 (9)
Technische Information / technical information
IGBT-Module IGBT-Modules
FS50R06YL4
vorlaufige Daten preliminary data
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
IC= 50A, VCC= 300V Einschaltverzogerungszeit (induktive Last) turn on delay time (inductive load) VGE= 15V, RG= 3,3, Tvj= 25C VGE= 15V, RG= 3,3, Tvj= 125C IC= 50A, VCC= 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= 15V, RG= 3,3, Tvj= 25C VGE= 15V, RG= 3,3, Tvj= 125C IC= 50A, VCC= 300V Abschaltverzogerungszeit (induktive Last) turn off delay time (inductive load) VGE= 15V, RG= 3,3, Tvj= 25C VGE= 15V, RG= 3,3, Tvj= 125C IC= 50A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulinduktivitat stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip Tc= 25C VGE= 15V, RG= 3,3, Tvj= 25C VGE= 15V, RG= 3,3, Tvj= 125C IC= 50A, VCC= 300V, VGE= 15V RG= 3,3, Tvj= 125C, L= 15nH IC= 50A, VCC= 300V, VGE= 15V RG= 3,3, Tvj= 125C, L= 15nH tP 10sec, VGE 15V, Tvj= 125C, VCC=360V, VCEmax=VCES -LCE *|di/dt| Eon Eoff ISC LCE RCC/EE tf 20 30 0,5 ns ns mJ td,off 120 130 ns ns tr 11 12 ns ns td,on 42 43 ns ns min. typ. max.
-
1,35
-
mJ
-
225
-
A
-
35
-
nH
-
4
-
m
Charakteristische Werte / characteristic values
Diode Wechselrichter / diode inverter
Durchlassspannung forward voltage Ruckstromspitze peak reverse recovery current IF= 50A, VGE= 0V, Tvj= 25C IF= 50A, VGE= 0V, Tvj= 125C IF= 50A, -diF/dt= 2600 A/s VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 50A, -diF/dt= 2600 A/s Sperrverzogerungsladung recovered charge VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 50A, -diF/dt= 2600 A/s Ausschaltenergie pro Puls reverse recovery energy VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C Erec 1,05 1,50 mJ mJ Qr 3,2 5,4 C C IRM 88 94 A A VF 1,25 1,20 1,7 V V
2 (9)
Technische Information / technical information
IGBT-Module IGBT-Modules
FS50R06YL4
vorlaufige Daten preliminary data
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value Tc= 25C Tc= 100C, R100= 493 Tc= 25C R2= R1 exp[B(1/T2 - 1/T1)] R25 R/R P25 B25/50 min. typ. 5 max. k
-5
-
5
%
-
-
20
mW
-
3375
-
K
Thermische Eigenschaften / thermal properties
Innerer Warmewiderstand; DC thermal resistance, juncton to case; DC Warmewiderstand; DC thermal resistance, junction to heatsink, DC Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter Paste = 1 W / m*K / grease = 1 W / m*K Ubergangs-Warmewiderstand, DC thermal resistance, case to heatsink; DC Transistor Wechelr. / transistor inverter Diode Wechselrichter / diode inverter Paste = 1 W / m*K / grease = 1 W / m*K Hochstzulassige Sperrschichttemp. maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Tvjmax Top Tstg 150 C RthCH 0,35 0,45 K/W K/W RthJC RthJH 0,95 1,50 0,62 1,20 K/W K/W K/W K/W
-40
-
125
C
-40
-
125
C
Mechanische Eigenschaften / mechanical properties
Innere Isolation internal insulation CTI comperative tracking index Anpresskraft pro Feder mounting force per clamp Gewicht weight Kriechstrecke creepage distance Anschluss - Kuhlkorper terminal to heatsink Anschluss - Anschluss terminal to terminal Luftstrecke clearance distance Anschluss - Kuhlkorper terminal to heatsink Anschluss - Anschluss terminal to terminal F Al2O3 225
40..80
N
G
36
g
13,5
mm
5,0
mm
12,0
mm
5,0
mm
3 (9)
Technische Information / technical information
IGBT-Module IGBT-Modules
FS50R06YL4
vorlaufige Daten preliminary data
Ausgangskennlinie (typisch) output characteristic (typical)
100 90 80 70 60 IC [A] 50 40 30 20 10 0 0,0 0,5 1,0 1,5 VCE [V] 2,0
Tvj = 25C Tvj = 125C
IC= f(VCE)
VGE= 15V
2,5
3,0
3,5
Ausgangskennlinienfeld (typisch) output characteristic (typical)
100 90 80 70 60 IC [A] 50 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 VCE [V] 3,0
VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V
IC= f(VCE)
Tvj= 125C
3,5
4,0
4,5
5,0
4 (9)
Technische Information / technical information
IGBT-Module IGBT-Modules
FS50R06YL4
vorlaufige Daten preliminary data
Ubertragungscharakteristik (typisch) transfer characteristic (typical)
100 90 80 70 60 IC [A] 50 40 30 20 10 0 5 6 7 8 9 VGE [V] 10
Tvj = 25C Tvj = 125C
IC= f(VGE)
VCE= 20V
11
12
13
Durchlasskennlinie der Inversdiode (typisch) forward characteristic of inverse diode (typical)
100 90 80 70 60 IF [A] 50 40 30 20 10 0 0,0 0,2 0,4 0,6 0,8 VF [V] 1,0
Tvj = 25C Tvj = 125C
IF= f(VF)
1,2
1,4
1,6
5 (9)
Technische Information / technical information
IGBT-Module IGBT-Modules
FS50R06YL4
vorlaufige Daten preliminary data
Schaltverluste (typisch) switching losses (typical)
3 2,5 2 E [mJ] 1,5 1 0,5 0 0 10 20 30 40
Eon Eoff Erec
Eon = f(IC), Eoff = f(IC), Erec = f(IC)
VGE= 15V, RG= 3,3, VCE= 300V, Tvj= 125C
50 IC [A]
60
70
80
90
100
Schaltverluste (typisch) switching losses (typical)
3
Eon Eoff Erec
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
VGE= 15V, IC= 50A, VCE= 300V, Tvj= 125C
2 E [mJ] 1 0 0 5 10 15 RG [] 20 25 30 35
6 (9)
Technische Information / technical information
IGBT-Module IGBT-Modules
FS50R06YL4
vorlaufige Daten preliminary data
Transienter Warmewiderstand transient thermal impedance
1,0000E+01
ZthJH = f (t)
ZthJH(K/W)
1,0000E+00
1,0000E-01
1,0000E-02 0,001
0,01
0,1 t (s)
Zth:IGBT Zth:Diode 1
10
i ri [K/kW]: IGBT i [s]: IGBT ri [K/kW]: Diode i [s]: Diode
1 57,0 0,00075 75,0 0,00056
2 190,0 0,02088 210,0 0,01240
3 532,0 0,14800 885,0 0,12800
4 171,0 0,25430 330,0 0,25430
Sicherer Arbeitsbereich (RBSOA) reverse bias safe operation area (RBSOA)
120 100
IC,Chip
VGE= 15V, Tj=125C
80 IC [A] 60 40 20 0 0
IC, Modul
200
400 VCE [V]
600
7 (9)
Technische Information / technical information
IGBT-Module IGBT-Modules
FS50R06YL4
vorlaufige Daten preliminary data
Schaltbild circuit diagram
Gehausemae package outline
Bohrplan drilling layout
8 (9)
Technische Information / technical information
IGBT-Module IGBT-Modules
FS50R06YL4
vorlaufige Daten preliminary data
Gehausemae Fortsetzung package outline contd.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes.
9 (9)
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